2input/2outputs
Electric Level/NPN Transistor/PNP Transistor
24V/20mA
12V Electric Level
24V Electric Level
Transistor
24VDC
Terminal Power Supply
Bus Power Supply
| Product Name | GS8554-EX.22 Isolated Barrier |
| Number of channels | 2inputs/2outputs |
| Supply voltage(Ue) | 20～35V DC |
| Input signal | NPN;PNP;Level signal |
| Output signal | 12V level;24V level;transistor |
| Weight | Approx 150g |
| Field apparatus | 2-wire Frequency signal source,3-wire Frequency signal source |
| Number of channels | 2inputs/2outputs |
| Dielectric strength | Between non-intrinsically safe part and intrinsically safe part≥2500VAC,Between power supply part and non-intrinsically safe part≥500VAC |
| Insulation resistance | Between non-intrinsically safe part and intrinsically safe part≥100MΩ,Between power supply part and non-intrinsically safe part≥100MΩ |
| Electromagnetic compatibility | According to IEC 61326-1(GB/T 18268) |
| EX marking | [Ex ia Ga]ⅡC |
| Weight | Approx 150g |
| Field apparatus | 2-wire Frequency signal source,3-wire Frequency signal source |
| Suitable location | zone 0;zone 1;zone 2;IIA;IIB;IIC;T4~T6 |
| Input signal | NPN;PNP;Level signal |
| Open circuit voltage | ≤26V |
| Distribution voltage | Voltage: ≥16V at 20mA |
| Level signal input | VH≥4V;VL≤1V,frequency≤50kHz |
| NPN input | Frequency≤20kHz |
| PNP input | Frequency≤20kHz |
| Output signal | 12V level;24V level;transistor |
| Transistor output | Transistor collector output:High level Vcc;Low level≤2.5V(drive current≤10mA);Transistor emitter output:High level Vcc-2.5V;Low level≤0.5V(drive current≤10mA);Note:"Vcc"is external power supply of output,Vcc≤40V |
| Level signal output | 24V series PLC,DCS high level 16V≤VH≤24V,12V series PLC,DCS high level 9V≤VH≤12V,low level VL≤0.5V |
| Supply voltage(Ue) | 20～35V DC |
| Power protection | Reverse protection of power supply |
| Current consumption | ≤160mA (at 24Vdc supply,12V/20mA distribution) |
| Power supply mode | Independent power supply |
| Power connecting mode | DIN Rail BUS;Terminal |
| Depth | 118.9mm |
| Height | 106.0mm |
| Width | 17.5mm |
| Brand | Phoenix |
| Material | PC |
| Degree of protection | IP20 |
| Flammability rating | UL94/V0 |
| Colour | gray |
| Approvals | NEPSI |
| NEPSI | [Ex ia Ga] IIC Comply with standard: GB 3836.1、GB 3836.4、GB 3836.20 |
| Max. r.m.s. a.c. or d.c. voltage Um | 250V |
| Max.output voltage Uo | 28V(9,10,11;12,13,14) |
| Max.output current Io | 93mA(9,10,11;12,13,14) |
| Max.output power Po | 651mW(9,10,11;12,13,14) |
| IIC Max. external inductance Lo | 4.2mH(9,10,11;12,13,14) |
| IIC Max. external capacitance Co | 0.083μF(9,10,11;12,13,14) |
| IIB Max. external inductance Lo | 12.6mH(9,10,11;12,13,14) |
| IIB Max. external capacitance Co | 0.65μF(9,10,11;12,13,14) |
| IIA Max. external inductance Lo | 33.6mH(9,10,11;12,13,14) |
| IIA Max. external capacitance Co | 2.15μF(9,10,11;12,13,14) |
| Electrical fast transient/burst immunity | According to:IEC 61326-1;Class A |
| Surge immunity | According to:IEC 61326-1;Class A |
| Radiated,radio-frequency,electromagnetic field immunity | According to:IEC 61326-1 |
| Electrostatic discharge immunity | According to:IEC 61326-1;Class A |
| Immunity to conducted disturbances, induced by radio-frequency fields | According to:IEC 61326-1 |
| Ambient temperature | -20℃~+60℃ |
| Storage temperature | -40℃~+80℃ |
| Relative humidity | 10%~90% |
| Environmental requirements | The air should not contain any medium corrupting the coat of chrome,nickel and silver.Moreover,violent quiver and impact or any cause of electromagnetic induction (such as big current or spark,etc.)must be avoided when using |
| Conductor cross section solid range | 0.5~2.5mm² |
| Conductor cross section flexible range | 0.5~2.5mm² |
| Conductor cross section AWG min. | 12 |
| Conductor cross section AWG max. | 24 |
| Stripping length | 8mm |
| Screw thread | M3 |
| Connection method | Screw connection |
| Tightening torque min. | 0.5 Nm |
| Tightening torque max. | 0.6 Nm |
| Mounting type | DIN35mm |
| Switch setting function | Type of input signal(level transistor)can be changed through setting K1,K2 |
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